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单晶硅掺杂类型对化学镀Ni-P膜的影响

Influence of dopant type in single crystal Si on the electroless plated Ni-P films
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摘要 本文采用化学镀的方法分别在P型、N型Si(100)表面制备了Ni-P膜,通过扫描电镜(SEM)及电子能谱仪(EDS)分析考察了同种制备条件下,在不同基底上镀膜的表面形貌和不同基底对镀层组分的影响;并用原子力显微镜(AFM)对不同基底上镀膜的平整度进行了研究。结果发现两种基底上的镀膜形貌、元素含量及镀膜平整度明显不同,以P型Si(100)作为基底时,膜层颗粒度及平整度较好。 The Ni- P Films are electrolessly deposited respectively on n- Si(100) and p- Si(100). On the same preparation condition , the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer , and flatness of films is studied by AFM. And The results show that the surface images, flatness and compositions of films are apparently dense as p -Si substrate and n -Si substrate, the quality of films on p -Si substrate is preferable.
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2011年第6期564-568,共5页 Journal of Functional Materials and Devices
基金 国家自然科学基金项目(51072184 51002143) 航空科学基金项目(2009ZE55003 2010ZF55013) 河南省基础与前沿技术研究计划项目(092300410139) 河南省教育厅自然科学基金项目(2011A140027)
关键词 化学镀 N型Si P型Si Ni—P膜 electroless N - Si P - Si Ni - Pfilms
作者简介 作者简介:麻华丽,(1977-),女,河南驻马店人,讲师,硕士,主要从事纳米薄膜材料研究。
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