摘要
随着集成电路结构和电路复杂性的增加,故障源头的判定和失效根本原因的分析也越来越困难。目前集成电路的失效分析研究主要集中在利用先进的分析仪器搜集证据进而推导失效机理,缺乏对失效的模拟反向验证。本文针对集成电路故障进行失效分析,检测到具体的物理损伤点,利用Multisim的工具,依据物理损伤位置和特征建立相应物理模型,研究缺陷对故障结果的贡献,进而确定故障的真正源头,同时与实际样品的测试结果进行对比验证,复现了集成电路的失效机理和失效过程。
As the complexity of integrated circuit structures and circuits increases,to verify the source of failure and the real root cause of failure become more and more difficult.However,at pres-ent,the failure analysis research of integrated circuits mainly focuses on the use of advanced analytical instruments to collect evidence and derive the failure mechanism but lacks the simulation and reverse verification of failure.In this paper,the failure analysis is carried out to detect the specific physical damage points for the integrated circuit fault,and the corresponding physical model is established ac-cording to the location and characteristics of the physical damage by using the Multisim tool,and the contribution of the defect to the fault result is studied,and then the real source of the fault is deter-mined,and the failure mechanism and failure process of the integrated circuit are reproduced by com-paring the test results with the actual sample.
作者
龚瑜
GONG Yu(STS Microelectronics Co.,Ltd.,Shenzhen,Guangdong,518038,CHN)
出处
《固体电子学研究与进展》
CAS
2024年第4期337-342,共6页
Research & Progress of SSE
关键词
故障仿真
电路模拟
失效分析
失效机理
仿真软件
fault emulation
circuit simulation
failure analysis
failure mechanism
simu-lation software
作者简介
联系作者:龚瑜,女,1988年生,湖南张家界人,在职研究生,主要研究方向为集成电路失效分析与可靠性提升,E-mail:15860740427@163.com。
