摘要
针对高频环境下寄生参数引起氮化镓(GaN)金属氧化物半导体场效应晶体管(MOSFET)开关损耗大的问题,提出一种基于GaN开关器件的半桥电路集成方案。该方案的实现基于寄生参数较低的高功率密度GaN半桥模块(GS66516T),通过有限元分析提取寄生参数联合电气模型参数仿真分析,从而实现驱动电路和功率环路的优化设计。最后,研制一台4kW两相交错并联降压变换器原理样机,并搭建双脉冲测试(DPT)平台用于分析测试实验中寄生参数对开关过程的影响。实验结果表明,该样机可实现功率密度536.19 W/in^(3),峰值效率97.65%,并具有较好的动态开关特性。
An integrated solution for a half-bridge circuit based on gallium nitride(GaN)switching devices is proposed in order to address the issue of high switching losses of metal oxide semiconductor field effect transistor(MOSFET)of GaN caused by parasitic parameters in high-frequency environments.The implementation of this solution is based on a high power density GaN half-bridge module(CS66516T)with lower parasitic parameters.Finite element analysis is us-ed to extract parasitic parameters and combined with electrical model parameters for simulation analysis,enabling the optimization design of the drive circuit and power loop.Finally,a 4 kW two-phase interleaved Buck converter prototype is developed,and a dual-pulse test(DPT)platform is set up to analyze the impact of parasitic parameters on the swi-tching process during testing experiments.The experimental results show that the prototype can achieve a power density of 536.19 W/in^(3),a peak efficiency of 97.65%,and exhibits good dynamic switching characteristics.
作者
廖志凌
桂久衡
王华佳
陈兆岭
LIAO Zhi-ling;GUI Jiu-heng;WANG Hua-jia;CHEN Zhao-ling(Jiangsu University,Zhenjiang 212000,China;不详)
出处
《电力电子技术》
2024年第8期121-124,共4页
Power Electronics
基金
江苏省重点研发计划(BE2019009-2)。
关键词
半桥模块
寄生参数
双脉冲测试
half-bridge module
parasitic parameter
dual-pulse test
作者简介
廖志凌(1971-),男,教授,研究方向为功率电子变换技术和太阳能光伏利用转换技术。
