摘要
为了解决研磨型氮化铝(AlN)基板制备的氮化铝活性金属钎焊(AlN-AMB)覆铜板剥离强度低的问题,采用浓度为0.25 mol/L的NaOH水溶液,在50℃条件下,对研磨型AlN基板表面进行腐蚀,开展腐蚀前后AlN基板表面微观形貌及AlN-AMB覆铜板界面剥离强度等的对比探究。结果表明,研磨型AlN基板表面存在大量破碎晶粒和微裂纹,所制备的AlN-AMB覆铜板气孔率较高,界面剥离强度只有5.787 N/mm。腐蚀可有效去除其表面破碎晶粒和微裂纹,提升AlN基板表面致密度和一致性。采用35 min腐蚀AlN基板制备的AlN-AMB覆铜板气孔率大幅降低,剥离强度提升至10.632 N/mm,相比处理前提升了83.7%。
In order to solve the problem of low peeling strength of aluminium nitride active metal brazed(AlN-AMB)copper substrates prepared by the lapping AlN substrates,NaOH aqueous solution with concentration of 0.25 mol/L was taken to etch the surface of the lapping AlN substrate at 50℃.Then comparative investigations on surface micro morphologies of the AlN substrates and interface peeling strengths of the AlN-AMB substrates before and after etching were performed.The results show that there are a large number of broken grains and micro-cracks on the lapping AlN substrate surface,the prepared AlN-AMB copper substrate has a high porosity,and the interface peeling strength is only as low as 5.787 N/mm.By etching,the surface broken grains and micro-cracks of the lapping AlN substrate can be effectively removed,thus improving the density and consistency of the AlN substrate surface.Porosity of the prepared AlN-AMB copper substrate by etching the AlN substrate for 35 min is greatly decreased,and the peeling strength is improved to 10.632 N/mm,which is 83.7% higher than before.
作者
许海仙
曾祥勇
王吕华
朱家旭
汤文明
Xu Haixian;Zeng Xiangyong;Wang Luhua;Zhu Jiaxu;Tang Wenming(The 43^(rd)Research Institute,CETC,Hefei 230088,China;Hefei Shengda Electronic Technology Industry Co.,Ltd.,Hefei 230088,China;School of Materials Science and Engincering,Hefei Unirersity of Technology,Hefei 230009,China;Anhui Province Key Laboratory of Microsystem,Hefei 230088,China)
出处
《半导体技术》
CAS
北大核心
2024年第3期246-251,共6页
Semiconductor Technology
基金
安徽省重大科技专项(202003a05020006)
安徽省重点研究与开发计划项目(202004a05020022)。
作者简介
许海仙(1986-),男,安徽宣城人,硕士,高级工程师,主要从事先进电子封装材料的研究;通信作者:汤文明(1969-),男,安徽巢湖人,博士,教授,博士生导师,主要从事材料失效分析及先进电子封装材料的研究。
