摘要
为了提高各向异性磁阻(AMR)传感器的性能,通过仿真模拟的方案来对传感器内部坡莫合金感应层的结构参数进行优化。利用OOMMF软件仿真坡莫合金薄膜的磁滞回线,使用控制变量法分别对薄膜取不同的厚度和长宽比时的性能进行分析。从仿真结果中的矫顽力、磁滞损耗等方面对比其磁学性能,并结合实际制备的薄膜表面粗糙度测试结果进行理论分析。最终,得到较为完整的坡莫合金薄膜结构参数来为AMR传感器性能优化提供理论依据。
In order to improve the performance of anisotropic magnetoresistance(AMR)sensor,the structural parameters of permalloy sensing layer inside the sensor is optimized by simulation scheme.OOMMF software is used to simulate the hysteresis loop of film.And the properties of permalloy film with different thickness and aspect ratio are analyzed by using control variable method.Magnetic properties of the film are compared from the coercivity and hysteresis loss of the simulation results,and the theoretical analysis is carried out based on the measurement result of surface roughness of actual prepared thin film.Finally,a relatively complete permalloy film structure parameters is obtained to provide theoretical basis for the performance optimization of AMR sensor.
作者
蒋琪
姜岩峰
JIANG Qi;JIANG Yanfeng(School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China)
出处
《传感器与微系统》
CSCD
北大核心
2024年第1期65-68,共4页
Transducer and Microsystem Technologies
作者简介
蒋琪(1995-),男,硕士,研究方向为磁传感器与模拟电路设计;通讯作者:姜岩峰(1972-),男,教授,主要研究领域为射频集成电路设计与实现、新型电路结构设计与实现。
