摘要
在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电集成提供新的材料平台.本文基于对GaAs材料剥离机理的分析阐述,优化了GaAs薄膜转移工艺的离子注入条件.结果表明,相比于He离子单独注入,由于较小的热预算和注入后相对更低的缺陷密度,He/H离子共注入对于GaAs薄膜转移更高效.以Al2O3为键合介质层,通过优化的离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上.探索了包括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺,以将转移后GaAs薄膜的表面质量提高到可以高质量外延的水平.在400℃退火1 h后,转移的GaAs薄膜单晶质量进一步提高,X射线摇摆曲线的半峰全宽仅为89.03 arcsec.
Heterogeneous integration of single-crystalline Ga As thin film on a Si substrate provides a promising material platform for Si-based optoelectronic integration.In this work,based on the clarified splitting mechanism of Ga As,the ion implantation conditions for Ga As film transfer were optimized.It was found that the co-implantation of He and H ions is more efficient in exfoliating the Ga As thin film with a lower thermal budget and lower density of defects in comparison with the case of the single He/H ion implantation.With the Al2O3as the bonding intermediate layer,a 4-inch Ga As film was successfully transferred onto the Si(100)substrate via the optimized ion-slicing technique.The surface treatments,including chemical mechanical polishing,ozone oxidation,and KOH cleaning,were explored to improve the surface quality of the as-transferred Ga As thin film to the level of epi-ready.After post-annealing at 400℃ for 1 h,the quality of the transferred Ga As thin film was further improved with only 89.03 arcsec for the full width at half maximum of the X-ray rocking curve.
作者
孙嘉良
林家杰
金婷婷
池超旦
周民
Robert Kudrawiec
李进
游天桂
欧欣
Jialiang Sun;Jiajie Lin;Tingting Jin;Chaodan Chi;Min Zhou;Robert Kudrawiec;Jin Li;Tiangui You;Xin Ou(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China;Jiaxing Key Laboratory of Plasma and Ion Beam Technology,Jiaxing 314100,China;Department of Semiconductor Materials Engineering,Wroclaw University of Science and Technology,Wroclaw 50-370,Poland;Beijing Semicore ZKX Electronics Equipment Co.,Ltd.,Beijing 100176,China)
基金
supported by the National Key R&D Program of China(2017YFE0131300)
the National Natural Science Foundation of China(62174167,61874128)
the Frontier Science Key Program of CAS(QYZDY-SSW-JSC032)
the Key Research Project of Zhejiang Laboratory(2021MD0AC01)
the Program of Shanghai Academic Research Leader(19XD1404600)
K.C.Wong Education Foundation(GJTD-2019-11)
NCBiR within the Polish-China(WPC/130/NIR-Si/2018)。
作者简介
孙嘉良,is a PhD student at Shanghai Institute of Microsystem and Information Technology(SIMIT),Chinese Academy of Sciences,under Prof.Ou’s supervision.His interest focuses on the heterogeneous integration of III-V materials and devices.These authors contributed equally to this work;Corresponding authors:林家杰,received his PhD degree from SIMIT,Chinese Academy of Sciences in 2020.Now he is a lecturer at Jiaxing University.His current research interest focuses on the fabrication and application of heterogeneous materials in ion-slicing technique.These authors contributed equally to this work emails:jjlin@mail.sim.ac.cn;Corresponding authors:游天桂,received his PhD degree from Technische Universität Chemnitz,Germany in 2016.Then he joined SIMIT,Chinese Academy of Sciences as an assistant professor,and he was promoted to be professor in 2020.His current research interests include the heterogeneous integration materials and devices.emails:t.you@mail.sim.ac.cn;Corresponding authors:欧欣,received his PhD degree in microelectronics and solid-state electronics from SIMIT,Chinese Academy of Sciences in 2010.After that he worked at Helmholtz Zentrum Dresden Rossendorf in Germany until 2014 when he joined SIMIT as a professor.He has authored more than 120 SCI papers and been authorized 69 patents.His current research interests include the hetero-integration of functional materials for high-performance electrical,optical and acoustical devices.emails:ouxin@mail.sim.ac.cn。
