摘要
探讨了低剂量离子注入技术对VO_(2)薄膜的结构和红外发射性能的影响,发现1×10^(15) cm^(-2)注量的W离子注入掺杂时,会对VO_(2)薄膜的晶体结构产生一定的损伤;经400℃退火处理后部分恢复了薄膜的单斜相晶体结构,且退火处理后,在掺杂W离子、结构缺陷和氧空位的共同作用下,掺杂量0.12%即可使VO_(2)薄膜的相变温度降低8.9℃;掺杂原子数量每增加1%,其相变温度相应变化74.2℃;W离子注入并经退火处理后,VO_(2)薄膜的红外发射率为0.35~0.46,其在低温区间的红外发射率相比未注入薄膜降低了0.14,这大幅度提高了VO_(2)薄膜在低温区的红外隐身性能.
Vanadium dioxide(VO_(2)), a typical metal insulator transition material, potentially has wide applications in functional materials due to a change in property before and after phase transition. But such applications are limited by the phase transition temperature of 68.0 ℃. In this work,monoclinic VO_(2)prepared on SiO/Si substrate was doped with low doses of W ions after ion implantation,before the films were annealed. Crystal structure of VO_(2)films was damaged by W ion implantation at 1×10^(15) ions/cm^(2). After annealing at 400 ℃,monoclinic crystal structure of the film was partially recovered. After annealing, phase transition temperature of VO_(2)thin films decreased by8.9 ℃ with doping of 0.12%,the change rate being 74.2 ℃. Infrared emissivity was reduced to 0.46-0.35. Infrared emissivity in low temperature region was 0.14 lower than the original VO_(2)film. These changes greatly improved infrared stealth performance of the film in low temperature region.
作者
李仁莹
刘霖
李锦潇
吴蕾
吴晓玲
郑瑞廷
程国安
LI Renying;LIU Lin;LI Jinxiao;WU Lei;WU Xiaoling;ZHENG Ruiting;CHENG Guoan(College of Nuclear Science and Technology,Beijing Normal University,100875,Beijing,China;Beijing Radiation Center,100875,Beijing,China)
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2022年第5期686-691,共6页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金资助项目(12175020,11575025,U1832176)。
关键词
二氧化钒
离子注入
钨
红外辐射
vanadium dioxide
ion implantation
tungsten
infrared emission
作者简介
通信作者:程国安(1963-),男,教授.研究方向:纳米材料与技术.E-mail:gacheng@bnu.edu.cn。
