摘要
针对传统结构超结IGBT器件在大电流应用时的电导调制效应较弱,削弱了IGBT器件低饱和导通压降优点的问题,设计了p柱浮空的超结IGBT器件(FP-SJ-IGBT)。采用深槽刻蚀和回填工艺制备了p柱和p体区分离的超结IGBT器件。测试结果表明,该器件击穿电压高于660 V,在导通电流20 A时,其饱和导通压降为1.7 V,相比于传统超结IGBT器件更低,关断能量为0.23 mJ,远低于传统超结IGBT器件的3.3 mJ,较低的导通压降和关断能量使得FP-SJIGBT器件的电流密度可达449 A/cm^(2)。此外,在400 V直流母线电压下,FP-SJ-IGBT器件具有不低于10μs的短路时间。
In order to solve the problem that the conductivity modulation effect of conventional super-junction(SJ)IGBTs is weak in high current applications,which weakens the advantages of low saturated on-state voltage drop of IGBTs,a SJ-IGBT with floating p-pillar(FP-SJ-IGBT)was designed.The SJ-IGBT with disconnected p-pillar and p-body was fabricated by deep trench etching and refilling process.The test results show that the breakdown voltage of the FP-SJ-IGBT is higher than 660 V.When the conduction current is 20 A,the saturated on-state voltage drop is 1.7 V,which is lower than that of the conventional SJ-IGBT,and the turn-off energy is 0.23 mJ,which is much lower than that of the conventional SJ-IGBT(3.3 mJ).The lower on-state voltage drop and turn-off energy enable the FP-SJ-IGBT to achieve a current density of up to 449 A/cm^(2).In addition,under 400 V DC bus voltage,the short-circuit time of the FP-SJ-IGBT is no less than 10μs.
作者
吴玉舟
李泽宏
禹久赢
潘嘉
陈冲
任敏
Wu Yuzhou;Li Zehong;Yu Jiuying;Pan Jia;Chen Chong;Ren Min(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Shanghai Super Semiconductor Technology Co.,Ltd.,Shanghai 201203,China;Shanghai Huahong Grace Semiconductor Manufacturing Co.,Ltd.,Shanghai 201203,China)
出处
《半导体技术》
CAS
北大核心
2022年第8期606-611,共6页
Semiconductor Technology
基金
江苏省重点研发计划项目(BE2020010)。
关键词
浮空p柱
超结
IGBT
寄生双极结型晶体管
电导调制
floating p-pillar
super junction
IGBT
parasitic bipolar junction transistor
conductivity modulation
作者简介
吴玉舟(1991—),男,江苏丹阳人,博士研究生,研究方向为新型功率半导体器件;李泽宏(1970—),男,重庆人,博士,教授,研究方向为功率半导体器件和功率控制系统。
