摘要
采用固相反应法制备了Ce_(x)Ca_(1−x)Bi_(4)Ti_(4)O_(15)(CCBT,x=0,0.02,0.04,0.06,0.08,0.10)铋层状高温压电陶瓷,研究了A位Ce掺杂对陶瓷晶体结构、微观结构、介电、压电性能的影响规律。结果表明:所有样品的主晶相均具有m=4的铋层状结构,当x≥0.08时,出现Bi_(2)Ti_(2)O_(7)焦绿石杂相。当Ce掺杂量x=0.06时,样品具有最高的压电常数(d_(33)=17 pC·N^(−1)),是纯CBT陶瓷(d_(33)=8 pC·N^(−1))的两倍以上。同时,该陶瓷还具有居里温度高(T_(c)=773℃)、室温下介电损耗低(tanδ=0.7%)、电阻率高(ρ=6.4×10^(7)Ω·cm@500℃)的特点,且在550℃退火后,其d_(33)仍保持14.2 pC·N^(−1),超过室温值的80%,是制作高温压电传感器的理想陶瓷材料。
Ce_(x)Ca_(1−x)Bi_(4)Ti_(4)O_(15)(CCBT,x=0,0.02,0.04,0.06,0.08,0.10)bismuth layered structured piezoelectric ceramics were prepared by using the conventional solid-state reaction method.The effect of A-site Ce doping on crystal structure,microstructure,dielectric and piezoelectric properties of the ceramics was investigated.All samples had bismuth layered structure with m=4 and Bi_(2)Ti_(2)O_(7) pyrochlore was present as the second phase when x≥0.08.Significantly enhanced piezoelectric coefficient(d_(33)=17 pC·N^(−1))was achieved for the ceramic sample with x=0.06,over two times than that of CBT(d_(33)=8 pC·N^(−1)).Meanwhile,this ceramic also had high Curie temperature(T_(c)=773℃),low dielectric loss at room temperature(tanδ=0.7%)and high resistivity(ρ=6.4×10^(7)Ω·cm@500℃).Furthermore,after annealing at 550℃,d_(33) still retained to be 14.2 pC·N^(−1),more than 80%of the room temperature value,indicating that it is ideal ceramic material for high temperature piezoelectric sensor applications.
作者
伍子成
沈宗洋
宋福生
骆雯琴
王竹梅
李月明
WU Zicheng;SHEN Zongyang;SONG Fusheng;LUO Wenqin;WANG Zhumei;LI Yueming(China National Light Industry Key Laboratory of Functional Ceramic Materials,Energy Storage and Conversion Ceramic Materials Engineering Laboratory of Jiangxi Province,School of Material Science and Engineering,Jingdezhen Ceramic University,Jingdezhen 333403,Jiangxi,China)
出处
《陶瓷学报》
CAS
北大核心
2022年第2期296-301,共6页
Journal of Ceramics
基金
国家自然科学基金(61671224)。
作者简介
通信联系人:沈宗洋(1979-),男,博士,教授。
