期刊文献+

n型IBC太阳电池磷掺杂工艺 被引量:3

Phosphorus Doping Process of n-Type IBC Solar Cell
在线阅读 下载PDF
导出
摘要 为了兼顾叉指背接触(IBC)太阳电池背表面场(BSF)区域的钝化性能和接触性能,在现有IBC太阳电池制备工艺基础上引入离子注入技术,对电池背表面场区域进行磷离子注入。研究了不同磷离子注入剂量对IBC电池钝化性能和接触性能的影响,并研究了烧结工艺对IBC电池接触性能的影响。实验结果表明,当磷离子注入剂量为6.6×10^(14)~6.8×10^(14)ions/cm^(2)、烧结温度为840℃、烧结带速为9.4 m/min时,背表面场区域可同时获得良好的钝化性能和接触性能,制备的IBC电池最高光电转换效率可达24.38%,平均光电转换效率可达24.21%,对应的短路电流密度为42.553 mA/cm^(2),开路电压为701.9 mV,填充因子为81.35%。 To take into account the passivation performance and contact performance of the back surface field(BSF)area of the interdigitated back contact(IBC)solar cell,ion implantation technology was introduced on the basis of the existing IBC solar cell preparation process,and phosphorus ion implantation was performed in the back surface field area of the cell.The influences of different phosphorus ion implantation doses on the passivation performance and contact performance of the IBC cell were studied,and the influence of the firing process on the contact performance of the IBC cell was studied.The experimental results show that when the implantation dose of phosphorus ion is 6.6×10^(14)-6.8×10^(14)ions/cm^(2),the firing temperature is 840℃,and the firing belt speed is 9.4 m/min,the back surface field area can simultaneously obtain good passivation performance and contact performance,the highest photoelectric conversion efficiency of the IBC cell can reach 24.38%,the average photoelectric conversion efficiency can reach 24.21%,the corresponding short-circuit current density is 42.553 mA/cm^(2),the open circuit voltage is 701.9 mV,and the fill factor is 81.35%.
作者 屈小勇 高嘉庆 郭永刚 吴翔 张博 杨爱静 张天杰 Qu Xiaoyong;Gao Jiaqing;Guo Yonggang;Wu Xiang;Zhang Bo;Yang Aijing;Zhang Tianjie(Xi'an Solar Power Branch,QingHai Huanghe Hydropower Development Co.,Ltd.,Xi'an 710100,China)
出处 《微纳电子技术》 CAS 北大核心 2022年第3期278-283,共6页 Micronanoelectronic Technology
关键词 叉指背接触(IBC)太阳电池 离子注入 钝化性能 接触性能 光电转换效率 interdigitated back contact(IBC)solar cell ion implantation passivation performance contact performance photoelectric conversion efficiency
作者简介 屈小勇(1983—),男,陕西渭南人,工程师,主要从事高效太阳电池及组件的研究;通信作者:高嘉庆(1993—),男,陕西咸阳人,硕士,工程师,主要从事高效太阳电池的研究。
  • 相关文献

参考文献5

二级参考文献16

  • 1刘恩科 朱秉升.半导体物理学[M].北京:国防工业大学出版社,1999.98-102.
  • 2Jianhua Zhao, Aihua Wang, Green A M. High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates[J]. Solar Energy Meterials & Solar Cells, 2001, 65 : 429 - 435.
  • 3Shockly W, Queisser J H. Detailed Balance Limit of Efficiency of p-n Junction Solar Cells[J]. Journal of Applied Physics, 1961, 32(3): 510 - 519.
  • 4Harkunen, Jaakko. Processing of High Efficiency Silicon Solar Cells[R]. Helsinki University of Technology Reports in Electron Physics, 2001.
  • 5Jian wu, Yumei Li, Xusheng Wang, et al. 19.2% efficient c-Si solar cells using ion implantation[A].The 22nd International Photovoltaic Science and Engineering Conference[C]. Hang-zhou, 2012.
  • 6Rohatgi, Meier A. Developing novel low-cost, high-throughput processing techniques for 20%-efficient monocrystalline silicon solar cells[J]. Photovoltaics International journal, 2010,(11):87 - 93.
  • 7Krygowski W T, Rohatgi A, Selzer T. A novel processing technology for high-efficiency silicon solar cells[J]. Journal of The Elecrochemical Society, 1999, 146:1141 - 1146.
  • 8Schmiga C, Hermle M, Glunz W S. Towards 20% Efficient n-Type silicon solar cells with screen-printed aluminiun-alloyed rear emitter[A]. 23rd European Photovoltaics Solar Energy Conference[C], Valencia, 2008.
  • 9Dawei W, Rui J, Ding Wuchang, et al. Optimization of Al2O2/SiNx Stacked Antireflection Structure for n-type surface-passivated crystalline silicon solar cells[J]. Journal of Semiconductors, 2011, 32(9) 094008-1 - 094008-4.
  • 10Aleman M, Das J, Janssens T, et al. Development and Intergration of a high efficiency baseline leading to 23% IBC Cells[J]. Energy Procedia, 2012, 27:638 - 645.

共引文献47

同被引文献11

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部