摘要
首先,利用TCAD半导体器件仿真软件对比分析了在无前表面结构、N型前表面场(Front Surface Field,FSF)及P型前表面浮空发射区(Front Floating Emitter,FFE)三种不同情况下N型插指背接触(Interdigitated Back Contact,IBC)太阳电池的输出特性。然后详细分析了FFE表面浓度和扩散深度对IBC太阳电池转换效率的影响,并在不同的前表面复合速率、背表面发射区覆盖比例及衬底电阻率情况下,针对FFE对IBC太阳电池电学性能的改善效果进行分析和评价,同时给出不同情况下最优的FFE结构参数。仿真结果表明:相比于FSF结构,FFE结构对IBC太阳电池电学性能的改善效果更显著。FFE表面浓度越高,峰值转换效率对应的扩散深度越小。在不同前表面复合速率、发射区覆盖比例及衬底电阻率情况下,FFE对IBC太阳电池转换效率的改善效果不同。在较高的前表面复合速率和较低的发射区覆盖比例情况下,FFE对电池转换效率的改善效果更加显著,对于较高的衬底电阻率情况,FFE对电池转换效率的改善效果与较低衬底电阻率的情况基本相同。
Firstly,The N-type interdigitated back contact mono-crystalline silicon solar cell’s output characteristics are analyzed by using TCAD semiconductor device simulation software without front surface Structural,with n-type front surface field and p-type front floating emitter three kinds of different situations.Then,the influences of front floating emitter surface concentration and diffusion depth on IBC solar cell’s Conversion efficiency are analyzed detailedly.The effect of improvement of front floating emitter structure on the IBC solar cell’s electrical properties is analyzed and evaluated under different surface recombination velocity,emitter area coverage ratio and substrate resistivity conditions.At the same time,the optimal surface field structural parameters are given under different conditions.The simulation results show that the effect of improvement of FFE structure on the IBC solar cell’s electrical properties is more significant.With the increase of the FFE surface concentration,the optimal diffusion depth decreased.The effect of improvement of front floating emitter structure on the IBC solar cell’s conversion efficiency is different under different surface recombination velocity,emitter area coverage ratio and substrate resistivity conditions.The effect of improvement of front floating emitter structure on the conversion efficiency is more significant under higher front surface recombination velocity and lower emitter area coverage ratio conditions.Compared with the lower substrate resistivity,the effect of improvement of front floating emitter structure on the conversion efficiency is basically the same under higher substrate resistivity.
作者
林涛
夏婷婷
LIN Tao;XIA Ting-ting(Nanjing Engineering Branch,Jiangsu Union Technical Institute,Nanjing 211135,China)
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2018年第10期3367-3371,共5页
Bulletin of the Chinese Ceramic Society
基金
江苏省教育厅高校"青蓝工程"优秀骨干教师培养项目(XHJX2017060)
关键词
背接触
太阳电池
浮空发射区
表面浓度
扩散深度
转换效率
back contact
solar cell
front floating emitter
surface concentration
diffusion depth
conversion efficiency
作者简介
林涛(1979-),男,硕士,副教授.主要从事应用电子技术、职业教育相关研究.
