摘要
使用Berkovich压头,采用恒载荷法对氧化镓的(100)及(010)晶面进行纳米压痕试验,通过数据拟合获得氧化镓晶体的蠕变应力指数。单晶氧化镓(100)晶面的蠕变应力指数范围在15.5~27.8,(010)晶面的蠕变应力指数范围在46.1~63.4。纳米压痕法能够有效测量氧化镓的蠕变变形量;氧化镓的2个晶面均呈现了初始蠕变和稳态蠕变2个阶段,其中,(100)晶面具有较明显的初始蠕变阶段和稳态蠕变阶段,但是(010)晶面的初始蠕变阶段不明显;保载载荷与氧化镓的蠕变位移、等效压痕应力呈正相关,对蠕变应力指数没有明显影响;氧化镓不同晶面的蠕变应力指数差异很大,(010)晶面较(100)晶面具有更大的蠕变应力指数,具有更强的抗蠕变性能,更适合精密机械加工。
The Berkovich indenter was used to conduct nanoindentation tests on the(100) and(010) crystal planes of gallium oxide by a constant load method, and the creep stress index of the gallium oxide crystal was obtained by data fitting. The creep stress index of single crystal gallium oxide crystal face(100) ranges from 15.5 to 27.8, and the creep stress index of crystal face(010) ranges from 46.1 to 63.4. The nanoindentation method can effectively determine the creep deformation of gallium oxide. The two crystal planes of gallium oxide show two stages of initial creep and steady-state creep. Among them, the crystal plane(100) has an obvious initial creep. The initial creep phase of the crystal plane(010) is not obvious. The holding load is positively correlated to the creep displacement and equivalent indentation stress of gallium oxide, and has no significant effect on the creep stress index. The creep stress index of different crystal planes of gallium oxide is different. The crystal plane(010) has a larger creep stress index rather than the crystal plane(100), which has a more intense creep resistance and is more suitable for precision machining.
作者
周海
徐亚萌
韦嘉辉
沈军州
冯晓雯
ZHOU Hai;XU Yameng;WEI Jiahui;SHEN Junzhou;FENG Xiaowen(College of Mechanical Engineering,Yancheng Institute of Technology,Yancheng 224051,Jiangsu,China;College of Mechanical Engineering,Jiangsu University,Zhenjiang 212013,Jiangsu,China)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2021年第3期557-563,共7页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(51675457)
江苏省研究生实践创新项目(SJCX201351)。
关键词
氧化镓
纳米压痕
蠕变特性
蠕变应力指数
gallium oxide
nanoindentation
creep property
creep stress exponents
作者简介
第一作者:周海(1965-),男,博士,教授。
