摘要
碳化硅(SiC)功率金属氧化物半导体场效应管(MOSFET)以其优越的特性受到广泛关注,介绍了非箝位感性开关(UIS)测试原理,搭建雪崩耐量测试平台,分析SiC MOSFET的单脉冲雪崩特性。探究UIS单脉冲测试对器件雪崩特性的影响,测试SiC MOSFET经过多次单脉冲UIS冲击后的雪崩耐量。最后,对比分析不同感性负载大小下器件的最大雪崩能量,得到了感性负载大小将影响器件的雪崩耐量这一结论。
Silicon carbide(SiC)power metal oxide semiconductor field effect transistor(MOSFET)has been widely concerned because of its superior characteristics.The testing principle of non-clamping inductive switch(UIS)is introduced,the avalanche tolerance test platform is built and the single pulse avalanche characteristics of SiC MOSFET are analyzed.The influence of UIS single pulse test on the avalanche characteristics of the device is investigated and the avalanche tolerance of SiC MOSFET after multiple single pulse UIS shocks is measured.Finally,the maximum avalanche energy of the device under different inductive load sizes is compared and analyzed and it is concluded that the perceptual load size will affect the avalanche tolerance of the device.
作者
徐晓筱
吴建德
何湘宁
李武华
XU Xiao-xiao;WU Jian-de;HE Xiang-ning;LI Wu-hua(Zhejiang University,Zhejiang 310027,China)
出处
《电力电子技术》
CSCD
北大核心
2020年第4期115-118,共4页
Power Electronics
基金
国家重点研发项目(2016YFB0400504)
浙江省关键技术项目(2017C01028)。
关键词
金属氧化物半导体场效应管
单脉冲
雪崩
metal oxide semiconductor field effect transistor
single pulse
avalanche
作者简介
徐晓筱(1994-),女,浙江绍兴人,硕士研究生,研究方向为电力电子技术。
