摘要
Due to the excellent optoelectronic properties,fast response time,outstanding power efficiency and high stability,micro-LED plays an increasingly important role in the new generation of display technology compared with LCD and OLED display.This paper mainly introduces the preparation methods of the GaN-based micro-LED array,the optoelectronic characteristics,and several key technologies to achieve full-color display,such as transfer printing,color conversion by quantum dot and local strain engineering.
基金
National Natural Science Foundation of China(NSFC)(61974031,61705041 and 61571135)
Shanghai Sailing Program(17YF1429100)
Shanghai Technical Standard Program(18DZ2206000)
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Funding(SKLIPR1607)
National Key Research and Development Program of China(2017YFB0403603).
作者简介
Correspondence to:Pengfei Tian,pftian@fudan.edu.cn。
