摘要
Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.
Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.
基金
Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0404100 and 2016YFA0201101)
the National Natural Science Foundation of China(Grant Nos.61574164,61704187,and 61604170)
the Key Research Program of the Frontier Science of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH042)
the State Key Program of the National Natural Science Foundation of China(Grant Nos.61734008and 11435010)
the National Key Scientific Instrument and Equipment Development Project,China(Grant No.11327804)。
作者简介
Corresponding author:王建峰,E-mail:jfwang2006@sinano.ac.cn;Corresponding author:徐科,E-mail:kxu2006@sinano.ac.cn。
