摘要
针对多孔硅气敏传感器在室温下对NO_2气体灵敏度较低、选择性不强的问题,采用双槽电化学腐蚀法制备多孔硅,然后在多孔硅顶部溅射沉积金属钨薄膜并经高温热处理氧化形成WO_3纳米线,制备出WO_3纳米线修饰多孔硅结构及其气敏传感器。对WO_3纳米线/多孔硅材料进行了SEM和XRD分析,测试了传感器室温下对NO_2的气敏特性。结果表明,制备WO_3纳米线的最佳热处理条件是700℃,此温度下增加金属钨膜溅射时间可提升WO_3纳米线的生长密度。所制备的传感器对NO_2气体表现出反型气敏响应,特别是溅射1 min金属钨的样品显示出优异的NO_2室温探测能力与选择性,对4×10^(-6) NO_2的气敏灵敏度是单纯多孔硅样品的5.8倍。
Porous silicon modified with WO3 nanowires( WO3/PS) was prepared to improve room temperature NO2 sensing properties of porous silicon. Porous silicon was fabricated by double-cell electrochemical etching. WO3 nanowires/porous silicon was prepared by thermal oxidation of W thin film sputtered on porous silicon. SEM and XRD were employed to characterize morphology and composition. NO2 gas sensing properties were analysed at room temperature. Results indicated that the optimum heating temperature of WO3 nanowires preparation is 700 ℃,and on this condition,WO3 nanowires intensity increases with extended sputtering time. Prepared WO3 nanowires/porous silicon exhibits inversion response to NO2. Among the prepared samples. 1 min W thin film sputtered sample has best NO2 sensing properties,that selectivity to NO2 is improved significantly and sensitivity to 4 × 10-6 NO2 is improved by 4.8 times than porous silicon.
作者
胡明
秦岳
赵博硕
强晓永
周立伟
HU Ming;QIN Yue;ZHAO Boshuo;QIANG Xiaoyong;ZHOU Liwei(School of Microelectronics,Tianjin University,Tianjin 300072,China)
出处
《传感技术学报》
CAS
CSCD
北大核心
2019年第2期167-171,189,共6页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金面上项目(61271070)
关键词
气体传感器
复合结构
多孔硅
氧化钨
二氧化氮
gas sensor
composite structure
porous silicon
tungsten oxide
nitrogen dioxide
作者简介
胡明(1951-),女,教授,博士生导师,主要研究方向为敏感材料与微纳传感器,huming@tju.edu.cn;秦岳(1993-),男,硕士研究生,主要研究方向为硅基多孔硅气敏材料,gkintju@tju.edu.cn。
