摘要
量子点红外探测器对比其他半导体光电探测器而言有很多优点。因此对于从理论上对量子点红外探测器进行研究是很有必要的,本文通过分析量子点激光器暗电流产生的原因,并对影响量子点红外探测器暗电流的原因进行了量化,建立了一个能表征量子点红外探测器暗电流的一个模型和算法并根据探测器的实际情况简化了该模型,通过对该模型的分析量子点红外探测器暗电流与温度、量子点密度和量子点侧面尺寸有关。
Quantum dot infrared photodetectors（QDIPs） have many advantages compared with other types of semiconductor-based photodetectors. So it is necessary to evaluate their characteristics theoretically. In this paper, by analyzing and quantifying the reason of the dark current of Quantum Dots Infrared Photodetectors, a model and algorithm for characterizing the dark current of Quantum Dots Infrared Photodetectors is established and the model is simplified according to the actual situation of the detector. The analysis of the model shows that the dark currents of the quantum dots infrared detector are related to the temperature, the density of the quantum dots and the side dimensions of the quantum dots.
作者
王政
WANG Zheng(Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai 200080,China;Shanghaitech University,Shanghai 200120,China;Key Laboratory of Infrared System Detection and Imaging Technology,Shanghai 200080,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《电子设计工程》
2018年第23期89-93,共5页
Electronic Design Engineering
关键词
量子点红外探测器
暗电流
电子激发
电势分布
quantum dot infrared photodetectors
dark current
electronic excitation
potential distribution
作者简介
王政（1989-），男，湖北公安人，硕士研究生。研究方向：光谱技术与成像光谱技术。
