摘要
本文建立了SRAM单元阵列(2×2)的几何结构简化模型、单粒子翻转截面计算模型,利用蒙特卡洛工具包Geant4编写了可视化程序,对能量为1-5MeV的低能段质子在SRAM单元中的输运过程进行了模拟,分析了不同能量的低能段质子在不同特征尺寸的SRAM单元灵敏体积中的沉积能量,并以此为基础,计算了由低能质子引起SRAM阵列的单粒子翻转截面与质子能量的关系。模拟结果表明,沉积能量在1-5MeV能量区间内随能量增大而减小,随特征尺寸增大而增大;单粒子翻转截面在1-5MeV能量区间内随随能量增大而减小,随临界电荷增大而减小。
The architecture of SRAM and single event upset section computation approach presented. Deposited energy and single event upset cross section are analyzed by the simulation of single event upset in different characteristic dimensions SRAMs induced by low energy proton using Monte-Carlo code Geant4. The simulating result shows that the deposited energy will decrease with the increase of incident proton energy, but it will increase with the increase of characteristic dimensions in the 1-SMeV energy range. And the SEU cross section will decrease with the increase of incident proton energy, but it will increase with the decrease of critical charge in the 1-SMeV energy range.
作者
杜枢
叶常青
梁云川
杨诚
陈虹见
DU Shu;YE Chang-qing;LIANG Yun-chuan;YANG Cheng;CHEN Hong-jian(Science and Technology on Reactor System Design Technology Laboratory,Nuclear Power Institute of China,Chengdu of Sichuan Prov.610213,Chian)
出处
《科技视界》
2018年第23期7-10,42,共5页
Science & Technology Vision
