摘要
应用Geant4工具,构造了不同特征尺寸的SRAM单元几何模型及单粒子翻转截面计算模型,分析了敏感体积和临界电荷对低能中子单粒子翻转效应的影响趋势,计算了反应堆裂变中子谱辐射环境下,不同特征尺寸SRAM的中子单粒子翻转截面,认为小尺寸SRAM器件的低能中子单粒子翻转效应更为严重。
The sensitivity of SRAMs to single-event upsets induced by neutrons with decreasing feature sizes was investigated using the Monte-Carlo code Geant4.Their device architecture and single-event upset cross section computation approach were pre-sented.The single-event upset cross sections were analyzed for mono-energetic neutron and neutrons of fission spectrum of a reactor and discussed on the basis of different parameters such as the sensitive volume,the critical charge and the incident neutron energy.Small-size SRAM devices are more sensitive than large-size devices on single-event upset effect induced by low-energy neutron.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2010年第3期362-367,共6页
Atomic Energy Science and Technology
基金
国家自然科学基金资助项目(10875096)
作者简介
郭晓强（1980-），男，重庆人，工程师，硕士研究生，核技术及应用专业
