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反应磁控溅射法制备ZnO/Al(O)/ZnO薄膜的光学和电学性能 被引量:1

Optical and Electrical Properties of ZnO/Al(O)/ZnO Film Prepared by Reactive Magnetron Sputtering
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摘要 采用反应磁控溅射法,通过控制中间层沉积时的氧气流量,在聚对苯二甲酸乙二醇酯基底上制备了ZnO/Al(O)/ZnO薄膜,研究了氧气流量对Al(O)薄膜的微观形貌、表面粗糙度,以及对ZnO/Al(O)/ZnO薄膜光学和电学性能的影响。结果表明:随着氧气流量的增加,铝在ZnO薄膜表面由三维岛状生长转变为二维层片状生长,Al(O)薄膜表面粗糙度先增大后减小再增大,当氧气流量为6.7×10^(-3)cm^3·s^(-1)时最小;随着氧气流量的增加,ZnO/Al(O)/ZnO薄膜在较长波长范围内的透过率增大,方阻增大,霍尔迁移率和载流子浓度下降;综合考虑光学和电学性能,适宜的氧气流量为6.7×10^(-3)cm^3·s^(-1)。 ZnO/Al(O)/ZnO films were prepared on polyethylene glycol terephthalate substrate by reactive magnetron sputtering and controlling oxygen flow rate during deposition of the intermediate layer.The effects of oxygen flow rate on micromorphology and surface roughness of Al(O)film and on optical and electrical properties of ZnO/Al(O)/ZnO film were studied.The results show that with increasing oxygen flow rate,the growth mode of Al on the surface of ZnO film changed from three-dimensional island-like to two-dimensional lamellar;the surface toughness of Al(O)film increased first,then decreased and then increased,and reached the lowest value at oxygen flow rate of 6.7×10^-3cm^3·s^-1.With increasing oxygen flow rate,the transmittance of ZnO/Al(O)/ZnO film increased in the range of relatively long wavelengths,the square resistance increased and the Hall mobility and carrier concentration decreased.Considering optical and electrical properties synthetically,the suitable oxygen flow rate was 6.7×10^-3cm^3·s^-1.
作者 邢士龙 闵光辉 庞涛 XING Shilong;MIN Guanghui;PANG Tao(School of Materials Science and Engineering,Shandong University,Jinan 250000,China;Department of Physics,Changji University,Changji 831100,China)
出处 《机械工程材料》 CAS CSCD 北大核心 2018年第8期48-52,82,共6页 Materials For Mechanical Engineering
关键词 反应磁控溅射 ZnO/Al(O)/ZnO薄膜 氧掺杂 氧气流量 reactive magnetron sputtering ZnO/Al(O)/ZnO film oxygen doping oxygen flow rate
作者简介 邢士龙(1991-),男,山东冠县人,硕士研究生;导师:闵光辉教授
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