摘要
为了研究氧气与氩气的比例和溅射气压对Zn O薄膜的微观结构及光电特性的影响,在氧化铟锡(ITO)玻璃上采用射频感应耦合离子源增强磁控溅射方法镀上具有一定c轴择优取向的Zn O薄膜,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针测试仪、紫外可见分光光度计表征薄膜微观结构与光电特性。结果表明随着氧分压的增加,薄膜表面的平整度先增加后减小,沿(002)方向生长的Zn O薄膜结晶度、晶粒尺寸先增加后减小,方阻先减小后增大,晶粒尺寸、方阻等值在O2和Ar的体积流量比为15∶60时达到极值。实验中改变溅射时的气压值,发现较大的溅射气压有利于磁控溅射的进行,有利于获得纯净的Zn O薄膜,在可见光范围内有的样品平均透过率超过90%。
In order to study the influence of proportion of oxygen and argon as well as sputtering pressure on the microstructure and photoelectric properties of the ZnO thin films. Through the method of RF inductively coupled ion source enhanced magnetron sputtering, ZnO films with certain c axis orientation prefered were plated on the Indium Tin oxide （ITO） glass. X-ray diffraction （XRD）, scanning electron nicroscope （SEM） , four-point probes and UV-vis spectrophotometer were used to represent the microstructure and properties of the films. The results show that surface flatness of the thin films first increases then decreases, the crystallinity along the orientation of （002） and grain size of ZnO thin films first increases then decreases and sheet resistance values first decrease then increase with the increase of oxygen partial pressure. The values of grain size and sheet resistance etc reach the peak at 15 ： 60 volume flow ratio of 02 and At. Through changing the sputtering pressure, the results show that higher sputtering pressure is good for magnetron sputtering process and getting purer ZnO thin films. Some values of the average transmittance are over 90% in the range of visible light.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第6期467-472,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(61072028)
广东省自然科学基金资助项目(S2013010012548)
关键词
ZNO薄膜
溅射气压
微观结构
透过率
方阻
ZnO thin films
sputtering pressure
microstructure
transmittance
sheet resistance
作者简介
宋从政（1991-）男，安徽铜陵人，硕士研究生，主要从事低温等离子体技术与纳米材料制备方面的研究,E-mail：15602230633@163．com；
陈俊芳（1957-）男，湖北咸宁人，博士生导师，主要从事低温等离子体技术与纳米材料制备方面的研究。
