摘要
具有无机-有机杂化钙钛矿结构的CH_3NH_3Pbl_3通常偏向于显示n型半导体特性,本文以五氧化二钽(Ta_2O_5)作为绝缘层,制备了基于钙钛矿CH_3NH_3Pbl_3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH_3NH_3Pbl_3所具有的p型场效应特性,空穴场效应迁移率达到8.7×10^(-5)cm^2·V^(-1)·s^(-1),此暗态空穴迁移率比原有报道的基于CH_3NH_3Pbl_3多晶薄膜的SiO_2底栅场效应晶体管提高了一个数量级。此外,光照对CH_3NH_3Pbl_3单晶场效应晶体管的性能有强烈影响。与底栅结构CH_3NH_3Pbl_3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm^(-2)的光照仍可使CH_3NH_3Pbl_3单晶场效应晶体管的空穴电流提高一个数量级(V_(GS)(栅源电压)=V_(DS)(漏源电压)=20 V),光响应度达到2.5 A·W^(-1)。本文工作实现了对CH_3NH_3Pbl_3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH_3NH_3Pbl_3同样具有制备成双极性晶体管的潜力。
Organic-inorganic hybrid perovskite methylammonium lead iodide （CH3NH3Pbl3） generally tends to show n-type semiconductor properties, in this work, a field-effect transistor （FET） device based on a CH3NH3Pbl3 single crystal with tantalum pentoxide （Ta2O5） as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer charactedstics in the dark was 8.7 × 10^-5cm^2·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3Pbl3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3Pbl3 single crystal. Different from a CH3NH3Pbl3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark （VGS （gate-source voltage） = VDS （drain-source voltage） = 20 V） and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that CH3NH3Pbl3 also has potential for use i n the absence of external factors, by appropriate device design n ambipolar transistors.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2017年第1期249-254,共6页
Acta Physico-Chimica Sinica
基金
supported by the National Natural Science Foundation of China(51173097,91333109)
National Key Basic Research Program of China(2013CB632900)
Tsinghua University Initiative Scientific Research Program,China(20131089202,20161080165)
Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(KF201516)~~
关键词
钙钛矿
五氧化二钽
场效应
迁移率
光照
Perovskite
Tantalum pentoxide
Field-effect
Mobility
Light illumination
