摘要
采用等离子增强化学气相沉积(PECVD)系统,以乙硅烷和氢气为气源,石英玻璃和单晶硅片为衬底制备了氢化非晶硅(a-Si∶H)薄膜。采用扫描电子显微镜、X-射线衍射仪、台阶仪、紫外可见分光光度计、傅里叶变换红外光谱仪和电子能谱仪等分别表征了a-Si:∶H薄膜的表面形貌、结晶特性、沉积速率,光学带隙,键合结构和Si化合态等特性。结果表明:随着衬底温度的增加,a-Si∶H薄膜表面的颗粒尺寸减小,均匀性增加,沉积速率则逐渐降低;衬底温度从80℃增加到130℃时,光学带隙显著增加,而在130℃至230℃范围内,光学带隙基本不随衬底温度变化;以Si H键对应的伸缩振动的相对峰强度逐渐增加,而以Si H2或(Si H2)n键对应的伸缩振动的相对强度逐渐减小;a-Si∶H薄膜中Si0+态的相对含量增加。因此,衬底温度大于130℃有利于制备优质a-Si∶H薄膜,230℃是沉积a-Si∶H薄膜的最佳衬底温度。
Hydrogenated amorphous silicon（ a-Si： H） thin films were deposited on silica glass and silicon substrates by plasma enhanced chemical vapor deposition（ PECVD）,using disilane and hydrogen as source gases. A scanning electron microscopy（ SEM）,a X-ray diffractometer,a surface profilometer,an ultraviolet-visible spectrometer,a Fourier Transform Infrared（ FTIR） spectrometer and a photoelectron spectrograph were used to characterize the deposited thin films. As the deposition temperature increased,the grain size of particles on the surface of a-Si： H thin film was decreased,the uniformity of the films was improved,and the deposition rate was decreased. The optical band gap of the films was increased drastically with the deposition temperature increased from 80 to 130 ℃ and then was saturated with a further increase of the temperature. The relative intensity of the FTIR peak position corresponding to the stretching vibration of Si H bonds was increased,while that corresponding to Si H2or（ Si H2）nbonds wasdecreased with the increase of the deposition temperature. The ratio of Si0 state in the thin film was increased. Based on the results,we concluded that the deposition temperature of greater than 130 ℃ is needed for preparing high quality a-Si： Hi thin films,with the optimal temperature at 230 ℃.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2016年第2期417-423,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(51362031
U1037604)
四川省教育厅资助科研项目(15ZB0317)资助
关键词
PECVD
衬底温度
沉积速率
光学带隙
键合方式
化合态
PECVD
deposition temperature
deposition rate
optical band gap
structure factor
chemical phases
作者简介
袁俊宝（1990-），男，新疆维吾尔自治区人，硕士研究生。E-mail：junbao_y@163．com
通讯作者：杨培志，研究员，博士生导师。E-mail：pzhyang@hotmail．com
