摘要
本文报告了用掺杂和轻度磷掺杂的活性反应蒸发,制备氢化作品硅的稳态光电导对温度及光强的依赖特性.在研究的样品中复合率由复合中心的陷获空穴对自由电子的俘获过程所限制,掺杂改变了定域态分布的形状,因而改变了光电导与光强关系的指数ν.掺杂也改变了费米能(?)的定域态密度,轻度的磷掺杂可以使光电导增大,,当磷掺杂使费米能级与导带扩展态距离小于0.25eV 时光电导反而变小.
For an undoped and slight phosphorus doped hydrogenated amorphous silicon(a-Si:H)film prepared by activated reactive evaporation,this paper points out the dependence of its photoconductivity on temperature and light intensity. In all of the investigated samples,the recombination rate is limited by the free-electron capturing of trapping holes in recombination centers. Phosphorus doping alters the profile of localized-state distribution and thus alters the dependence factor γ of photoconductivity on light intensity. Doping also alters significantly the localized states density at Fermi level. Photoconductivity increases as a result of slight phosphorus doping,and it decreases as soon as phosphorus is heavily doped to make Ec-EF smaller than 0.52 eV.
出处
《华侨大学学报（自然科学版）》
CAS
1989年第1期11-17,共7页
Journal of Huaqiao University(Natural Science)
