摘要
目的观察电针刺激四神聪、神庭、本神穴对脑卒中后记忆障碍的影响,并探讨其可能作用机制。方法将脑卒中后出现记忆障碍的62例患者随机分为电针治疗组与对照组,电针组行电针刺激四神聪、神庭、本神穴及常规治疗,对照组仅行常规治疗,疗程结束后观察疗效。结果治疗后两组患者Mo CA总分及记忆分值增加,两项增加值比较电针组均比对照组提高明显(P<0.05)。工作记忆的事件相关电位研究表明:治疗后两组患者P300潜伏期缩短,波幅增高,其变化值比较两组差异有统计学意义(P<0.05)。结论电针刺激四神聪、神庭、本神穴能改善脑卒中后认知及记忆功能。
Objective： To observe the effect of electroacupuncture treatment at Sishencong（EX-HN1）,Shenting（GV 24） and Benshen（GB13） on impaired memory in stroke patients,and to investigate its possible mechanism.Methods： 62 cases of patients with impaired memory after stroke were randomly divided into acupuncture treatment group（n=32） and control group（n=30）. The patients in treatment group were received electroacupuncture stimulation on Sishencong（EX-HN1）,Shenting（GV 24） and Benshen（GB13） and conventional treatment,while the patients in control group received conventional treatment only. Curative effects were observed after 4 weeks treatment. Results： Mo CA scores and the memory scores of Mo CA were increased after treatment in two groups,and the added values of both scores in treatment group increased more significantly than those in control group respectively（P〈0.05）. Event-related potentials study on working memory showed that the latency of P300 decreased and amplitude of P300 increased in two group after treatment. The change values had significant differences between the two groups（P〈0.05）. Conclusion： Electroacupuncture treatment at Sishencong（EX-HN1）,Shenting（GV 24） and Benshen（GB13） on impaired memory in stroke patients can improve the cognitive and memory function.
出处
《中国中医急症》
2015年第5期775-777,共3页
Journal of Emergency in Traditional Chinese Medicine
基金
财政部专项基金支持课题(2013CZ-38)
