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PECVD法硅纳米晶体的制备及在线表面改性 被引量:2

The synthesis and in-flight passivation of silicon nanocrystals via PECVD
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摘要 通过等离子体增强化学气相沉积法(PECVD)制备粒径大小可以控制的硅纳米晶体,并对制备的纳米晶硅进行了在线表面改性.实验结果表明:成功获得了表面经烃基改性的不同粒径的纳米晶硅.相较于没有改性的纳米晶硅,它具有良好的抗氧化性和抗团簇能力,在有机溶剂中有着很好的分散性. Utilizing plasma-enhanced chemical vapor deposition(PECVD) approaches, the synthesis and in-flight passivaton of size-controllable Si nanoctystals were presented. The results showed that different size silicon nanocrystals were successfully grafted with 1-alkenes. Compared with unfunctionalized silicon particles, they were hydrophobic and had higher oxidation resistance, kinetic stability, which could form a stable dispersion in organic solvents.
出处 《西南民族大学学报(自然科学版)》 CAS 2014年第6期928-934,共7页 Journal of Southwest Minzu University(Natural Science Edition)
基金 国家高技术研究发展计划(863计划)资助项目(2011AA050515)
关键词 纳米晶硅 PECVD 制备 表面改性 silicon nanocrystals PECVD synthesis surface functionalization
作者简介 张珈铭(1990-),男,汉族,四川汉源人,硕士研究生,研究方向:新能源材料研究. 张静全(1970-),男,教授,博士,研究方向:半导体光电材料及器件应用.
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