摘要
综述了清洗液的组成、特点、清洗机理、对硅片表面质量的影响以及清洗技术和理论的发展：着重指出了，改进的ＲＣＡ１对颗粒度、微粗糙度和金属沾污作用的机理，讨论了它与清洗顺序的关系；极度稀释的ＲＣＡ２能使金属沾污降至１０１０原子／ｃｍ２以下，且不易使颗粒重新沉淀；最后介绍了清洗工艺的最新进展。
This paper is a review on the evolution of cleaning technologies and theories, focusing on the recipes of cleaning solutions, their characteristics, mechanism and their impacts on the surface quality of polished wafers. The effects of improved RCA1 are presented in particular, RMS and metal contamination, and the correlation with the cleaning sequence. Extremely diluted RCA2 can reduce metal contamination down to 1010at/cm2, and is unlikely to introduce particle re-deposition. At last, the up-to-date technologies of wafer cleaning are discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第3期17-19,34,共4页
Semiconductor Technology
基金
国家自然科学基金!(69976025)
教育部博士点基金和优秀青年教师基金资助
