摘要
对目前硅片湿式化学清洗方法中常用的化学清洗溶液的清洗机理、清洗特点、清洗局限以及清洗对硅片表面微观状态的影响进行了详细论述。介绍了兆声波、臭氧、电解离子水、只用HF清洗或简化常规工艺后最后用HF清洗等最新的硅片清洗技术,指出了硅片清洗工艺的发展趋势。
The paper introduced the cleaning principle, cleaning characters, cleaning limitation and the effect to the surface micro-condition of some traditional cleaning solutions. It also introduced some new cleaning technologies such as megasonic, O_3, electrolytic ionized water and just only use HF or use HF in the last step to clean silicon wafer. At the same time, the paper pointed out the developing tendency of the silicon wafer cleaning process.
出处
《中国稀土学报》
CAS
CSCD
北大核心
2003年第z1期144-149,共6页
Journal of the Chinese Society of Rare Earths
关键词
硅片
硅片清洗
硅片表面微观状态
silicon wafer
silicon wafer cleaning
silicon wafer surface micro-condition
作者简介
刘红艳(1974-), 女, 北京人, 工学硕士, 工程师; 研究方向: 硅片清洗及检测,通讯联系人(E-mail: byliu74@yahoo.com)
