摘要
对TFT-LCD器件氧化铟锡(ITO)层无退火新工艺进行了深入研究,通过将氧化铟锡相变与聚酰亚胺(PI)膜固化过程同步进行,简化了工艺过程,节约了生产成本。采用无退火工艺氧化铟锡膜层的平均电阻值和膜层透过率与传统高温退火工艺下基本相同,可以实现低的电阻值和高的透过率。无退火工艺下PI膜表面平整均匀,氧化铟锡膜与PI膜界面结合良好,无鼓包、麻点等,也没有反应产物生成;经过TFT特性测试发现,无退火工艺比高温退火工艺条件下,无论暗态还是光照状态,开电流没有明显区别,漏电流可降低44%;通过无退火工艺和传统高温退火工艺制备的液晶显示屏的V-T特性相同。
This paper makes a deep research on the new technology of anneal skip process for the TFT-LCD device. The anneal skip process can simplify the process and decrease the cost of production by the synchronization of ITO transformation and PI film curing. Using the anneal skip process, the average resistance of ITO layer and the transmittance of the film were the same as that of the traditional high temperature anneal process. A low resistance and a high transmittance could be realized. The surface of PI film was smooth.There was a good interface between the ITO layer and the PI film;no drum kit, pits and reaction products appeared. At dark or photo state, Ion of TFT using the anneal skip process was the same as that using the high temperature process, but Ioff had a decrease by 44%. The V-T characteristic of panel using the anneal skip process and the high temperature anneal process were the same.
出处
《液晶与显示》
CAS
CSCD
北大核心
2014年第1期55-59,共5页
Chinese Journal of Liquid Crystals and Displays
作者简介
通信联系人，E—mail：zhangjiaxiang@hoe．com．cn张家祥（1985-），男，北京人，硕士，工程师，主要从事液晶显示器相关的技术研发工作。 E—mail：zhangjiaxiang@boe．com．cn
