摘要
通过对碳化硅冶炼炉内温度场的数值模拟,研究了单热源炉与多热源炉温度梯度的分布与演变规律,并采用X衍射对多热源与单热源合成炉中不同部位的合成产品的物相进行了对比分析。研究表明,多热源合成炉内温度场均匀性更好;适合碳化硅生长的高温区域,多热源法要大于Acheson单热源法;多热源合成炉内无高温聚集区,生产更平稳、更安全。
The distribution and evolution of temperature gradient in single-heat-source and multi-heat-source furnaces are studied by numerical simulation of the temperature field in a smelting furnace for silicon carbide. X ray diffraction is used to make phase analysis and comparison of the products synthesized at different areas in the single-heat-source and multi- heat-source furnaces. The results show that in the multi-heat-source furnace the temperature field has better uniformity and the high temperature region fit for SiC growth is wider than that in the single-heat-source furnace. No high temperature aggregation zone exists in the multi-heat-source furnace, indicating more steady and safer production.
出处
《矿冶工程》
CAS
CSCD
北大核心
2013年第6期97-100,共4页
Mining and Metallurgical Engineering
基金
国家自然科学基金(51074123)
陕西省教育厅科研计划项目(12JK0785)
榆林市产学研合作项目(2011)
西安科技大学博士基金(2011QDJ022)资助
关键词
碳化硅
多热源
温度场
均匀性
温度梯度
silicon carbide
muhi-heat-source
temperature field
uniformity
temperature gradient
作者简介
作者简介：王晓刚（1959-），男，陕西蓝田人，教授，博士生导师，主要从事硅镁材料制备理论与应用研究。
