摘要
采用磁控溅射技术首先在玻璃基片、单晶硅片上溅射非晶硅薄膜再在其表面溅射铝膜,并用快速退火炉在不同温度下进行退火。利用台阶仪、拉曼散射光谱(Raman)仪和X射线衍射(XRD)仪对薄膜进行性能表征。结果表明:在功率120W,气压1.5～2.5pa,时间为3.5～4.5h的条件下可制备得非晶硅薄膜,Al诱导能降低晶化温度,并在500～600℃间存在一最佳晶化温度。
Morphous silicon thin films and luminum thin films were deposited on glass substrate and monocrystalline silicon substrate by magnetron sputtering.The thin films were characterized by Profile-system,Raman scattering spectroscopy（Raman）and X-ray diffraction（XRD）.Results show amorphous silicon thin film can be well prepared by magnetron sputtering at 120w,1.5~2.5pa Ar pressure for 3.5~4.5h.Al induction can reduce crystallization temperature.Preliminary research shows that an optimal crystallization temperature is existing in the temperature range of 500-600℃,with aluminum induction.
出处
《云南师范大学学报（自然科学版）》
2013年第2期16-19,共4页
Journal of Yunnan Normal University:Natural Sciences Edition
基金
国家自然科学基金联合基金资助项目(U1037604)
关键词
非晶硅薄膜
磁控溅射
铝诱导晶化
多晶硅
Amorphous silicon thin film
Magnetron Sputtering
Aluminum-induced crystallization
Polycrystalline silicon
作者简介
段良飞（1988-）男，云南罗平人，硕士研究生，主要从事硅基薄膜材料及其太阳能电池的研究．
通信作者：杨培志（1966-）男，研究员，博士生导师，主要从事太阳能利用材料及器件研究．
