摘要
采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.
A comparative study of YBa2Cu3O7-x（YBCO） films grown on biaxially textured Ni substrates [using CeO2/YSZ/Y2O3（YSZ is Y stabilized ZrO2） as buffer layers] and LaAlO3（100） substrates by photo-assisted metal organic chemical vapor deposition（MOCVD） was carried out.It is found that the growing temperature of YBCO film grown on Ni substrate is lower about 30 ℃ than that on LAO substrate.Besides,the growth rate on Ni substrate is higher than that on LAO.The phenomena can be explained by the fact that the thermal conduction of Ni substrate is better than LAO.The critical superconducting current density Jc of YBCO films grown on Ni substrate and LAO substrate are about 0.5 and 1.8 MA/cm2,respectively.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第3期527-531,共5页
Chemical Journal of Chinese Universities
基金
国家自然科学基金(批准号:51002063)资助
作者简介
联系人简介：李国兴，男，博士，讲师，主要从事高温超导材料方面的研究．E-mail：liguoxing@jlu．edu．cn
张宝林，男，博士，教授，博士生导师，主要从事高温超导材料及半导体发光器件方面的研究E-mail：zbl@jh．edu．cn
