摘要
Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power （Pmax） is presented and anMyzed. The degradation at both electron energies has been correlated with the displacement damage dose （Dd）. A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has Mso been used to predict the Si solar cell response in a low-earth-orbit （Altitude 799 km, Inclination 99~） radiation environment, considering the shielded effect of a 120 ~m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite （duration from April 2007 to July 2010）, a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.
Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power （Pmax） is presented and anMyzed. The degradation at both electron energies has been correlated with the displacement damage dose （Dd）. A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has Mso been used to predict the Si solar cell response in a low-earth-orbit （Altitude 799 km, Inclination 99~） radiation environment, considering the shielded effect of a 120 ~m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite （duration from April 2007 to July 2010）, a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.
作者简介
高欣,E-mail:gaoxin510@hotmail.com.
