摘要
作为第三代的半导体材料———SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点 ,在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景 .文章综述了半导体SiC材料生长及其器件研制的概况 .
As a third generation semiconductor materials, SiC has a large band gap, high thermal conductivity, high electron saturation velocity, high breakedown voltage and low dielectric constant. Its promising properties make it an attractive material for high\|frequency, high\|power, high\|temperature and radiation stable electronic devices, UV detectors and short wave length LED's. This review describes the progress of SiC bulk and film growth and its device applications.
出处
《物理》
CAS
2000年第8期481-487,共7页
Physics
基金
国家自然科学基金
