摘要
硅纳米线由于特殊的光学及电学性能如量子限制效应及库仑阻塞效应等,在纳米电子器件的应用方面具有潜在的发展前景。介绍了采用电子束蚀刻技术(EB)、反应性离子蚀刻技术(RIE)、金属有机物化学气相沉积(MOCVD)等制备技术及场效应晶体管、单电子探测器及存储器、双方向电子泵及双重门电路等硅纳米线纳米电子器件的最新进展情况,并对其发展前景作了展望。
Si nanowire is promising in application of nanoelectronic devices due to its specially optical and electronic properties such as quantum confinement effect and coulomb blockade effect. The recent developments of nanoelectronic devices such as field effect transistor(FET), single electron detector and memory cell, bi-directional electron pumps, dual-gate configuration which were fabricated with electron bind lithography(EB), reaction ion lithography(RIE), metal organic chemical vapor deposition(MOCVD) are reviewed. The developments of nanoelectronic devices with Si nanowires are also discussed in the paper.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第10期44-47,共4页
Electronic Components And Materials
关键词
电子技术
硅纳米线
综述
纳米电子器件
制备
性能
electronic technology
silicon nanowire
review
nanoelectronic devices
fabrication
properties
