摘要
采用两步激光晶化方法制备了多晶硅薄膜 ,其晶粒尺寸达到 1 .1 μm.分析了在不同激光功率密度下 ,由两步激光晶化方法所制备的多晶硅薄膜的拉曼光谱 .测量了相应薄膜晶体管的转移特性和输入输出特性 ,由此得出薄膜晶体管的迁移率为 1 0 3 cm2 /( V·s) ,ION/IOF F为 1 0 6 ,分别是传统单步晶化制备的薄膜晶体管的2 .5倍和 1 1倍 .
A novel technique of two step XeCl laser crystallization for the growth of poly Si thin film on glass substrate was investigated. The grain size of this poly Si thin film is 1.1μm being about 3 times larger than that fabricated using conventional single step laser crystallization. Using the approach p type poly Si thin film transistors (TFTs) is fabricated with electron mobility of 103cm 2/(V·s) and ON/OFF current ratio of 10 6. They are 2.5 times and 11 times, respectively, larger than those of poly Si TFTs fabricated using conventional single step laser crystallization. The Raman spectra analyses and the study of growth mechanism of poly Si thin film fabricated using two step laser crystallization showed that the laser power density for the first step crystallization should be smaller than that of second step crystallization to obtain uniform and non continuous seeds. But for second step crystallization, the power density should be larger than 350mJ/cm 2 to obtain large grain size.
出处
《华中理工大学学报》
CSCD
北大核心
2000年第3期93-95,共3页
Journal of Huazhong University of Science and Technology
关键词
多晶硅薄膜
薄膜晶体管
激光晶化
拉曼光普
poly Si thin film
thin film transistors
laser crystallization
Raman spectra
