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基于三维热电耦合有限元模型的IGBT失效形式温度特性研究 被引量:41

Investigation of the Temperature Character of IGBT Failure Mode Based on 3D Thermal-Electro Coupling FEM
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摘要 铝引线键合点脱落和焊剂层剥离是IGBT模块两种主要的失效形式。失效形式的失效程度不同,则IGBT的温度特性也不同。本文给出了一种基于热电耦合有限元模型分析IGBT模块失效形式的失效程度与其温度之间关系的数值模拟方法,比较了两种失效形式对IGBT性能的影响程度。研究结果表明:在施加相同的载荷条件和边界条件下,键合点脱落对器件的性能影响程度更高。这种方法及研究结果有助于功率模块设计人员评估IGBT模块失效形式对于模块性能的影响程度、判断失效、制订失效标准以及IGBT模块的优化设计。 Aluminium wire bonding lift-off and solder delamination are the main failure modes of IGBT module.When the severity of the failure mode is different,the temperature character of IGBT is also different.This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature,and compares the influence degree of two kinds of failure modes to the performance of IGBT module.The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary condition.This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT,determine the failure,establish the failure standards and find the optimization of structure design.
出处 《电工技术学报》 EI CSCD 北大核心 2011年第7期242-246,共5页 Transactions of China Electrotechnical Society
基金 国家863计划资助项目(2008AA11A108)
关键词 热电耦合 有限元 IGBT 键合点脱落 焊剂层剥离 数值模拟 Thermal-electric coupling finite element IGBT bonding lift-off solder delamination numerical simulation
作者简介 郑利兵男,1972年生,博士后,主要研究方向功率模块热设计技术和MEMS设计与集成技术。 韩立男,1970年生,研究员,博士生导师,主要研究方向功率模块的集成技术以及纳米加工技术。
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  • 1乔尔敏,温旭辉,郭新.基于IGBT并联技术的大功率智能模块研制[J].电工技术学报,2006,21(10):90-93. 被引量:13
  • 2胡建辉,李锦庚,邹继斌,谭久彬.变频器中的IGBT模块损耗计算及散热系统设计[J].电工技术学报,2009,24(3):159-163. 被引量:157
  • 3Chow T P, Baliga B J, et. al. A self-aligned short process for IGBT[J]. IEEE Transactions on ED, 1992(6): 1317-1320.
  • 4Pirondi A, Nicoletto G, Cova P, et al. Thermo- mechanical finite clement analysis in press-packed IGBT design[J]. Microelectronics Reliability, 2000(40): 1163-1172.
  • 5Yun Chansu, Malberti Paolo, Ciappa Mauro, et al. Thermal component model for electrothermal analysis of IGBT module systems[J]. IEEE Transactions on Advanced Packaging, 2001, 24(3): 401-406.
  • 6Shammas N Y A. Present problems of power module packaging technology[J]. Microelectronics Reliabilty, 2003(43): 519-527.
  • 7ANSYS Release 8.0 Documentation.
  • 8Sauveplane J B, Tounsi P, Scheid E, et al. 3D electro-thermal investigations for reliability of ultra low on state resistance power mosfet[J]. Microelec- tronics Reliability, 2008(48): 1464-1467.
  • 9Koji Sasski, Naoko Iwasa. Thermal and structural simulation techniques for estimating fatigue life of anIGBT module[C]. Proceedings of the 20thinternational symposium on power semiconductor devices and IC's, Oralando, FL, 2008: 181-184.
  • 10Wu W, Held M, Jacob P, et al. Investigation on the long term reliability of power IGBT module[C].Proceedings of 1995 international symposium on power semiconductor devices and IC's, Yokohama:IEEE, 1995: 443-448.

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