摘要
用等离子体浸没离子注入(PIII)对聚酰亚胺(PI)薄膜进行表面改性处理,研究在不同注入时间条件下聚酰亚胺薄膜表面电性能的转变,并通过X光电子能谱(XPS)分析其转变的机理。结果表明,经等离子体浸没离子注入处理后,聚酰亚胺薄膜的表面电阻与未处理的样品比较下降了约6个数量级,而且没有时效性问题;XPS分析结果表明处理后样品表面的C、N元素含量增加,O元素含量减少,说明样品表面受离子轰击发生了损伤,C=O、C-N键断裂,因此聚酰亚胺薄膜表面电阻下降主要是由薄膜表面发生碳化引起。
The surface modification of polyimide（PI） films was carried out by plasma immersion ion implantation（PIII）,and the transition of surface electrical property at different implanting time was investigated with the transition mechanism analyzed via XPS（x-ray photoelectron spectroscopy）.The results showed that the sheet resistance（ρs） of polyimide film decreases by nearly 6 orders of magnitude without aging effect in comparison with its intrinsic value.XPS analysis revealed that the contents of C and N elements increase and the content of O element decreases on the specimens＇ surfaces after PIII.It implies the damage to the surfaces due to ion bombardmant which causes the C=O and C-N bonds to be broken off.So,the reason why the sheet resistance of polyimide films decreases is mainly the surface carbonization of the films during PIII.
出处
《真空》
CAS
北大核心
2011年第2期37-39,共3页
Vacuum
作者简介
作者简介：陈惠敏（1966-），女（壮族），广西壮族自治区平乐县人，硕士，高级实验师。
