摘要
研究了用于热电变换器件的半导体材料碲化铅晶体气相生长和区熔生长的生长特性,测试了碲化铅的热电性质.结果表明,不掺杂的碲化铅室温下为P型,温差电动势率随温度的升高先缓慢增大然后快速减小。
The growth property of crystal lead telluride that is used for thermoelectric conversion device by vapour phase growth and zone melting methods is researched. Measurement of its thermoelectric properties shows that: the prepared PbTe crystal is P type at room temperature; its thermoelectric electromotive force rate increases slowly at first, then drops rapidly with the increase of temperature , at last the material turns into N type .
基金
浙江省科委资助项目! (96110 612 5)
中日政府间国际科技合作项目! (1995:31)
