摘要
近年来对掺杂纳米SiO2的聚酰亚胺薄膜的各种性能进行了充分的研究,而对以少量PI掺杂的多孔SiO2薄膜的研究较少。介绍了PI掺杂多孔SiO2薄膜制备过程中影响薄膜性能及应用的两个关键因素(相分离和热处理固化成膜),理论分析了PI掺杂多孔SiO2薄膜的力学性能和绝热性能,最后讨论了目前存在的一些问题和今后的发展趋势。
In recent years,there are a large number of researches on the properties of PI film doped with nano- SiO2 ,but the studies on the properties of porous SiO2 film doped with PI are less. Two key factors, phase separation and heat cured film, which affect properties and application of porous SiO2 film doped with PI in the preparation process are described. The mechanical properties and thermal insulation mechanism oF porous SiO2 film doped with PI are theoretically analyzed. Finally, the present problems and trends in the future are discussed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第19期123-125,131,共4页
Materials Reports
基金
云南省应用基础研究计划重点项目(2006E0001Z)
作者简介
张学艳：女，1986年生，硕士生，从事薄膜材料制备研究E-mail：zhangxueyan088@163．com
柳清菊：通讯作者，女，教授，博导Tel：0871-5035376E-mail：qjliu@ynu．edu．cn
