摘要
外延工艺作为BiCMOS的关键工艺,影响着双极和CMOS器件的多项性能参数。文章对高速BiCMOS器件进行外延工艺研究,设计出了合理的外延层参数,并针对该参数进行了外延工艺的研发。高频器件需要超薄的外延层,控制较窄的过渡区是其关键,文章研究了几个主要外延工艺参数对过渡区的影响,并提出了一种通过减压、低温、本征外延得到窄过渡区的工艺方法。试制结果表明自掺杂效应得到明显抑制,1.5μm外延层下过渡区宽度小于0.25μm,外延层质量良好,测试结果表明该工艺能够满足高速BiCMOS器件的需要。
Epitaxial process is the initial process of BiCMOS,influence several parameters of Bipolar and CMOS devices.This paper research the epitaxial process for high-speed BICMOS,designed optimized epi parameters and develop the epi process for the BiCMOS device.High-speed devices require thin epitaxial layer and controling the narrow transition zone is the key.This study show that how some main process parameters influence the transition region,and develop an optimized process to reduce the transition region by reduced pressure,low temperature and intrinsic epitaxial methods.Trial results show that the transition zone is less than the width of 0.25μm in the 1.5μm epitaxial process,and test results show that the process meet the needs of high-speed BiCMOS device.
出处
《电子与封装》
2010年第6期29-34,共6页
Electronics & Packaging
作者简介
吴兵（1984-），男，湖北黄冈人，硕士研究生，研究方向为亚微米BiCMOS工艺技术。
