摘要
为了揭示Al-C-N非晶薄膜的结构、导电性以及它们之间的关系,本文采用非平衡磁控溅射沉积技术在Si(100)基体上沉积得到了不同Al含量的Al-C-N薄膜。使用X射线光电子能谱仪、X射线衍射和高分辨透射电镜研究了所制备薄膜的相组成和微观结构。采用四引线法测定了薄膜电阻率-温度关系和霍尔电阻率-磁场关系。实验结果表明,所制备薄膜为非晶结构,结构致密,没有明显的缺陷,薄膜中主要的化学键为C-N,C-C和Al-N键。薄膜的成分对其导电性能有着明显的影响,当Al含量较低时,Al-C-N薄膜为p型半导体;当Al含量较高时薄膜转变为绝缘体。
The Al-C-N composite films with different M contents were deposited on Si（100） substrates by closedfield unbalanced reactive magnetmn sputtering in a mixture of argon and nitrogen. The microstructures and properties were characterized with X-ray diffraction, X-ray photoelectron spectroscopy Raman spectroscopy, field-emission scanning electron microscopy high resolution transmission electron microscopy and conventional probes. The results show that the amorphous Al-C-N films are compact with unobservable defect density, and that the C-N, C-C and Al-N bonds dominate in the films. In addition, the M content strongly affects its electrical property. For example, low Al content resulted in semi-conducting films;whereas high M content produced the insulating films.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2010年第2期138-143,共6页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金资助项目(No.50871018)
关键词
Al—C—N薄膜
磁控溅射
结构
导电性
Aluminum carbonitride film, Magnetron sputtering, Structure, Electrical conductivity
作者简介
联系人：Tel：（010）62321017；E-mail：lu_yonghao@mater．ustb．edu．cn
