摘要
量子点的光学特性与量子点的大小均匀性、密度、内部应变以及隔离层的厚度等有密切关系.文中从理论角度定量研究了GaNXAs1-X应变补偿层对InAs/GaAs量子点生长质量的改善作用,分析了应变补偿层对隔离层厚度减小的作用.讨论了应变补偿层的补偿位置和补偿层N组分X对量子点生长时局部应变和体系应变的补偿作用.分析了应变补偿层对体系应变的减少作用,并计算了相邻层量子点的垂直对准概率.研究结果对实验中应变补偿的优化和高质量量子点阵列的生长实现提供了理论依据.
The optical properties of quantum dots have a close relationship with the size fluctuation,density,strain filed distribution of the dots and the spacer layer thickness. InAs/GaAs quantum dot with GaNXAs1-X strain compensation layers （SCL） is theoretically investigated for improving the crystal quality. The reduction effects of the spacer thickness are discussed quantitatively. The influence of the location and the N concentration of the GaNXAs1-X SCL on compensation of the strain formed on quantum dots （QDs） and the system is also discussed. The reduction effect of SCL on strain of system is analyzed and the vertical alignment probability between the adjacent layers is calculated. Our results can provide a theoretical basis for finding the optimal properties of SCL to realize the high quality multi-QD layer.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第2期765-770,共6页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2009AA03Z405)
国家自然科学基金(批准号:60644004)资助的课题~~
关键词
应变补偿
量子点
strain compensation quantum dot
作者简介
通讯联系人．E-mail：yuzhongyuan30@gmail．com
