摘要
用等离子体增强化学汽相淀积法系统制备了发光纳米硅（ｎｃＳｉ∶Ｈ）薄膜．讨论了晶粒尺寸和表面结构对光致发光（ＰＬ）谱的影响．用量子限制发光中心模型解释了ｎｃＳｉ∶Ｈ的ＰＬ．研究了ＰＬ谱的温度特性．温度从１０Ｋ上升到２５０Ｋ，ＰＬ峰值红移了５４ｍｅＶ，且ＰＬ强度衰减了两个数量级．
Abstract Light emitting hydrogenated nano crystalline silicon (nc Si∶H) films have been fabricated using plasma enhanced chemical vapor deposition method.It was found that photoluminescence(PL) properties are directly related to grain size and surface strucuture.The quantum size effect and surface states model was proposed to explain PL.Meanwhile,temperature dependence of PL peak energy and integrated intensity are also studied.The former is mainly caused by band gap shrinkage and the PL intensity decrease with increasing temperature can be interpreted using a temperature independent radiative term and a temperature dependent thermally activated non radiative one.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第5期864-870,共7页
Acta Physica Sinica
基金
国家自然科学基金
