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中频磁控溅射沉积DLC/TiAlN复合薄膜的结构与性能研究 被引量:4

Microstructures and Properties of Diamond-Like Carbon/TiAlN Composite Films by MF Magnetron Sputtering
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摘要 采用中频非平衡磁控溅射沉积工艺,并施加霍尔离子源辅助沉积,在高速钢W18Cr4V及单晶硅基体上制备了梯度过渡的DLC/TiAlN复合薄膜。利用扫描电镜(SEM)、X射线光电子能谱仪(XPS)、显微硬度计、摩擦磨损仪等分析检测仪器对DLC/TiAlN复合薄膜的表面形貌、晶体结构、显微硬度、耐磨性等性能进行了检测分析。实验及分析结果表明:DLC/TiAlN薄膜平均膜厚为1.1μm,由于薄膜中的Al含量较多,使得复合薄膜的表面比DLC薄膜的表面要粗糙一些;通过对复合薄膜表层的XPS分析可知,ID/IG为2.63。由XPS深层剖析可知,DLC/TiAlN薄膜表层结构与DLC薄膜基本相同,里层则与TiAlN薄膜相似。在梯度过渡膜中,复合膜层之间的界面呈现为渐变过程,结合的非常好。DLC/TiAlN薄膜的显微硬度为2030 HV左右。与DLC薄膜显微硬度接近,低于TiAlN薄膜的显微硬度。但是DLC/TiAlN薄膜的耐磨性要好于TiAlN薄膜和DLC薄膜;DLC/TiAlN薄膜的耐腐蚀性能略好于DLC薄膜。 The diamond-like Carbon(DLC)/TiAlN composite films, with gradient transition layers, were grown by mid frequency magnetron sputtering and Hall ion source assisted deposition on high speed steel W18Cr4V and silicon substrates. Its microstructures and its mechanical properties were characterized with scanning electron microscopy (SEM). Xray photoelectron spectroscopy (XPS) and conventional mechanical probes. The results show that the fairly smooth and compact DLC/TiAlN films, about 1 μm in thickness with strong interfacial adhesions, display good mechanical properties. For example, its micro-hardness is 2030 HV, close to that of the DLC films, but higher than that of TiAlN films on high speed steel substrate. When it comes to wear resistance, the DLC/TiAlN composite film is a little better than both DLC and TiAlN films. Moreover, it has higher corrosion resistance than the DLC films. The ID/IG was found to be 2.63. The XPS depth profiles show that the DLC/TiAlN surface structure resembles that of DLC and its inner layers mimics that of TiAlN films. Interesting finding is that high content of Al possibly roughens the surfaces of DLC/TiAlN films.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2008年第5期424-428,共5页 Chinese Journal of Vacuum Science and Technology
基金 国家863计划资助项目(No.2001AA338010)
关键词 TIALN薄膜 DLC薄膜 非平衡磁控溅射 中频溅射 等离子辅助沉积 TiAlN films; DLC films; Unbalanced magnetron sputtering; Medium frequency sputtering; Plasma ion assisted deposition
作者简介 联系人:Tel:13604020195;Email:zyc54@china.com
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参考文献12

  • 1Carvalho N J M,Zoestbergen E.Tlain Solid Films,2003,429: 179- 189.
  • 2Oh Soo-ghee, Kim Yong-mo, Jeon-gun. Thin Solid Films. 2005,475:6- 11.
  • 3Manaila R, Devenyi A, Biro D, et al. Surf Coat Teehnol, 2002, 151-152:21 - 25.
  • 4Mayrhofer P H,Tischler G. Surface and Coatings Technology. 2001,142-144:78 - 74.
  • 5Hsieh J H, Wu W, Li C, et al. Surface and Technology,2003, 163-164: 233 - 237.
  • 6董浩,黎明锴,刘传胜,付强,卢宁,范湘军.中频脉冲磁控溅射制备氮化铝薄膜[J].武汉大学学报(理学版),2002,48(3):339-342. 被引量:11
  • 7Flores M, Muhl S, Andradeb E. Thin Solid Films, 2003,433 (1-2) :217 - 223.
  • 8Huang Jia-Hong, Lan Kiang-Wee, Yu Ge-Ping. Surface & Coatings Technology. 2005,191(1) : 17 - 24.
  • 9Kelly P J,Amell R D. Vacuum,2000,56(3) : 159- 172.
  • 10Takalka H,Nakamura E,Oshika T, et al.Surf coat Technol, 2004,177-188 : 306 - 311.

二级参考文献37

  • 1Dave Doerwald ,Thomas Krug ,Roel Tietema ,Wei-Ming Sim ,Quanshun Luo ,Papken Hovsepian ,林松盛 ,代明江 .用于轻金属切削的新工具涂层[J].国外金属热处理,2004,25(5):15-18. 被引量:7
  • 2代明江,林松盛,候惠君,李洪武.类金刚石膜的性能及其在模具上的应用[J].模具制造,2005,5(9):54-56. 被引量:11
  • 3Strite S, Morko H. GaN, AlN, and InN: A review[J]. J Vac Sci Technol,1992, B10(4): 1237.
  • 4Shim Yun-keun, Kim Yoon-kee, Lee K H, et al. The Properties of AlN Prepared by Plasma Nitriding andPlasma Source Ion Implantation Techniques[J]. Surf Coat Technol, 2000,131:345-349.
  • 5Davis Robert T.Ⅲ-Ⅴ Nitrides for Electronic and Optoelectronic Application Applications[J].Proceedings of the IEEE,1991,79:5702-5711.
  • 6Naik Rajan S,Lutsky Joseph J,Reif Rafael,et al.Measurement of the Bulk,C-axis Electromechanical Coupling Constant as a Function of AlN Flim Quality[J].IEEE Transactions on Ultrasonic,Ferroelectricsand Frequency Control,2000,47(1):292-296.
  • 7Melanin A F, Bouilov L L. Application of Aluminum Nitride Films for Electronic Devices[J]. Diamond and Related Materials, 1999, 8: 369.
  • 8Adam T,Kolodzey J,Swann C P, et al. The Electrical Properties of MIS Capacitors with AlN Gate Dielectrics[J]. Applied Surface Science, 2001,428:175-176.
  • 9Oliveira I C, Massi M,Santos S G,et al. Dielectric Characteristics of AlN Films Grown by d.c.-magnetron Sputtering Discharge[J]. Diamond and Related Materials, 2001,10:1317.
  • 10Miao X S, Chan Y C, Pun E Y. Influence of Reactive Gas Pressure on the Deposition of an AlN Protective Film for Organic Photo-conductor[J]. Thin Solid Films, 1998,315: 123-126.

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