摘要
采用溶胶-凝胶(sol-gel)法,使用浓度分别为0.1 M、0.2 M和0.3 M的前驱体溶液,在单晶Si(100)衬底上制备了LaNiO3(LNO)导电薄膜,研究了前驱体溶液浓度对LNO薄膜结构和导电性能的影响.X射线衍射测试表明,三种样品均为纯的钙钛矿相,具有较好的(110)择优取向.扫描电子显微镜截面分析显示,用0.2 M前驱体溶液制备的LNO薄膜样品厚度均匀,与Si衬底间没有明显扩散.采用标准四探针法测试了三种样品的电阻率,当前驱体溶液浓度为0.2 M时,样品电阻率最小,仅为2.08×10-3Ω.cm,具有良好的导电性.
LaNiO3 （LNO） thin films were prepared on Si（100） substrates by a sol-gel method. We investigated the effect of precursor concentration on the structure and the conductivity of LNO films. The X-ray diffraction results showed that all of the samples were of pure perovskite structures and of high （110）-orientation. Scanning electron microscope analysis showed that the thickness of the 0.2 M-LNO film was uniform and that no obvious diffuse occurred at the interface between the LNO layer and the Si substrate. Among these three samples, the 0.2 M-LNO film displayed the lowest resistivity of 2.08×10^-3 Ω·cm.
出处
《河南大学学报（自然科学版）》
CAS
北大核心
2006年第2期25-28,共4页
Journal of Henan University:Natural Science
基金
河南省高校创新人才培养工程资助课题
作者简介
魏凌（1978-）,女,新乡卫辉人,河南大学助教,硕士研究生.
张伟风,通讯联系人.E-mail： wfzhang@henu.edu.cn.
