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新颖的双间隔RF MEM可变电容的设计与模拟

Design and Simulation of a Novel Two-gap RF MEM Variable Capacitor
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摘要 设计了一种可用于射频(RF)通信系统中的MEM平行板可变电容,采用新颖的双间隔(two-gap)结构、金属铝极板、折叠“Y”形支撑和厚度不均的可动极板。用CoventorWare软件模拟了电容的C-V特性,当控制电压从0变化到10V时,RF信号电容相应从0.37pF增加到5.64pF,变容比约为15.24∶1;用HFSS软件模拟了电容的S11参数,电容的品质因数Q在1.8GHz下约为77.78。 A MEM variable capacitor for RF communications systems was presented. The capacitor was designed using a novel two-gap structure, using aluminum as the capacitor electrode material, using “Y” shape beams as the suspend electrode spring, and using a asymmetry thickness plate as the suspend electrode. The C-V characteristic was simulated by CoventorWare software. The capacitance of the signal capacitor is variable from 0.37 pF to 5.64 pF as the control voltage is swept from 0 to 10V, and the capacitance ratio is 15.24 : 1. The Stt parameter of the capacitor is obtained by HFSS software, and the Q factor is 77.78 at 1.8 GHz.
出处 《电子元件与材料》 CAS CSCD 北大核心 2006年第1期41-44,共4页 Electronic Components And Materials
关键词 电子技术 射频 MEM可变电容 变容比 品质因数 electronic technology RF MEM variable capacitor capacitance ratio quality factor
作者简介 董乔华(1981-),男,江苏大丰人,研究生.主要从事RFMEMS的研究。Tel:(025)83792632—8826:E—mail:dongqhor@hotmail.com。 通讯作者:廖小平(1966-)。男,湖南衡阳人,教授。博士,主要从事RFMEMS的研究。Tel:(025)83792632—8807;E—mail:xpliao@seu.edu.cn;
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参考文献5

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