摘要
本文研究了真空Ｃｕ，ＣｕＣｒ３和ＣｕＣｒ５０合金在真空小间隙下的击穿强度和击穿后表面组织特征，认为个同成份的合金由于表面熔化层快速冷却时产生的不同表面组织形貌特征是影响其击穿强度的一个重要原因。
In this paper,the dielectric strength of pure Cu,CuCr3, CuCr50 alloys has beenmeasured and the metallographs of these alloys were observed by SEM. Experimental results showthat the dielectric strength depends on the surface morphology which was formed in the coolingprocess after breakdown operations.
出处
《真空电子技术》
北大核心
1996年第4期31-33,共3页
Vacuum Electronics
关键词
真空击穿
表面
合金
铜
acuum breakdown,Surface, Alloy
