摘要
采用介质阻挡化学气相沉积法(DBD CVD)在Si及石英衬底上、室温下成功的沉积出光滑、致密、均匀、膜基结合较好的类金刚石(DLC)薄膜,并考察了电源电压对类金刚石薄膜结构及性能的影响。拉曼光谱(Raman)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、紫外可见光谱(UV Vis)、高阻仪等测试及分析结果显示DBD CVD 法适于制备高质量硬质DLC薄膜。对DBD放电做了理论分析,结果与工艺研究的结论相符合。
Smooth, dense, uniform and good-adhesive diamond-like carbon (DLC) films have been deposited on silicon and quartz substrates by dielectric barrier discharge assisted CVD (DBD-CVD) in (Ar +C2H4) atmosphere at room temperature. Measurement results from SEM, Raman, UV-Vis and High-resistance confirm that DBD-CVD was feasible for preparation of DLC films. With the increasing of applied voltage, the content of sp3C in the film increases. Theoretic analysis accord with experimental results quit well.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第4期555-558,共4页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2001AA320202)
关键词
DBD-CVD
DLC
拉曼光谱
Chemical vapor deposition
Film preparation
Raman spectroscopy
Scanning electron microscopy
