摘要
研究了硅膜掺杂浓度、厚度和硅化物厚度等工艺条件对 SOI MOSFET寄生双极晶体管增益的影响。提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。原因是 :1基区杂质浓度增加 ,减弱了发射极向基区注入多子 ,增强了基区向发射区的少子注入 ;2增加硅化物厚度会增加其横向扩展 。
The influences of channel doping, Si film thickness and silicide thickness on the parasitic bipolar gain were studied. The results show that the MOSFETs, with higher doping, thicker Si film and silicide, have lower parasitic bipolar gain. The reason should be: (1) the emitter efficiency is decreased by increasing the base doping; (2) The thicker Ti will encroach more, and the perturbation to the hole concentration in the emitter causes to increase larger number of holes to be injected into the emitter and reduces the emitter efficiency.
出处
《电子器件》
CAS
2004年第4期575-577,共3页
Chinese Journal of Electron Devices
